Overview
Performance | |
Sequential Read (up to) | 3290 MB/s |
Sequential Write (up to) | 2100 MB/s |
Random Read (100% Span) | 710000 IOPS |
Random Write (100% Span) | 68000 IOPS |
Latency - Read | 79 µs |
Latency - Write | 34 µs |
Power - Active | Sequential Avg. 20.71 W (Write), 9.88 W (Read) |
Power - Idle | <5 W |
Technical Specification
Essentials | | Capacity | 4 TB | Status | Announced | Launch Date | Q2'17 | Lithography Type | 3D NAND TLC | Performance | | Sequential Read (up to) | 3290 MB/s | Sequential Write (up to) | 2100 MB/s | Random Read (100% Span) | 710000 IOPS | Random Write (100% Span) | 68000 IOPS | Latency - Read | 79 µs | Latency - Write | 34 µs | Power - Active | Sequential Avg. 20.71 W (Write), 9.88 W (Read) | Power - Idle | <5 W | Reliability | | Vibration - Operating | 2.17 GRMS | Vibration - Non-Operating | 3.13 GRMS | Shock (Operating and Non-Operating) | 50 G Trapezoidal, 170 in/s | Operating Temperature Range | 0°C to 55°C | Endurance Rating (Lifetime Writes) | 21690 TBW | Mean Time Between Failures (MTBF) | 2 million hours | Uncorrectable Bit Error Rate (UBER) | <1 sector per 10^17 bits read | Warranty Period | 5 yrs | Package Specifications | | Form Factor | HHHL (CEM3.0) | Interface | PCIe NVMe 3.1 x4 | Advanced Technologies | | Enhanced Power Loss Data Protection | Yes | Hardware Encryption | AES 256 bit | High Endurance Technology (HET) | Yes | Temperature Monitoring and Logging | Yes | End-to-End Data Protection | Yes | Intel® Smart Response Technology | No | Intel® Rapid Start Technology | No | Intel® Remote Secure Erase | No |
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